发明授权
- 专利标题： Ion beam device
- 专利标题（中）： 离子束装置
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申请号： US13144620申请日： 2010-01-08
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公开(公告)号： US08263943B2公开(公告)日： 2012-09-11
- 发明人: Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Noriaki Arai , Tohru Ishitani
- 申请人： Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Noriaki Arai , Tohru Ishitani
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly & Malur, PC
- 优先权： JP2009-006306 20090115
- 国际申请： PCT/JP2010/000086 WO 20100108
- 国际公布： WO2010/082466 WO 20100722
- 主分类号： H01J49/10
- IPC分类号： H01J49/10 ; H01J37/28
摘要：
Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.
公开/授权文献
- US20110266465A1 ION BEAM DEVICE 公开/授权日：2011-11-03
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