Invention Grant
- Patent Title: Directional gas injection for an ion source cathode assembly
- Patent Title (中): 离子源阴极组件的定向气体注入
-
Application No.: US12340812Application Date: 2008-12-22
-
Publication No.: US08263944B2Publication Date: 2012-09-11
- Inventor: John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
- Applicant: John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J27/00
- IPC: H01J27/00
Abstract:
In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
Public/Granted literature
- US20100155619A1 DIRECTIONAL GAS INJECTION FOR AN ION SOURCE CATHODE ASSEMBLY Public/Granted day:2010-06-24
Information query
