Invention Grant
- Patent Title: Phase change memory device and method of manufacture thereof
- Patent Title (中): 相变存储器件及其制造方法
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Application No.: US11746315Application Date: 2007-05-09
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Publication No.: US08263959B2Publication Date: 2012-09-11
- Inventor: Chao-Hsiung Wang , Li-Shyue Lai , Denny Tang , Wen-Chin Lin
- Applicant: Chao-Hsiung Wang , Li-Shyue Lai , Denny Tang , Wen-Chin Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.
Public/Granted literature
- US20070205406A1 Phase Change Memory Device and Method of Manufacture Thereof Public/Granted day:2007-09-06
Information query
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