Invention Grant
- Patent Title: Thin film transistor and method of manufacturing the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US12453295Application Date: 2009-05-06
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Publication No.: US08263978B2Publication Date: 2012-09-11
- Inventor: Byung-wook Yoo , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
- Applicant: Byung-wook Yoo , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0093862 20080924
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20
Abstract:
A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
Public/Granted literature
- US20100072480A1 Thin film transistor and method of manufacturing the same Public/Granted day:2010-03-25
Information query
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