Invention Grant
- Patent Title: Via structure with improved reliability
- Patent Title (中): 通过结构提高了可靠性
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Application No.: US11294217Application Date: 2005-12-05
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Publication No.: US08264086B2Publication Date: 2012-09-11
- Inventor: Shau-Lin Shue , Cheng-Lin Huang , Ching-Hua Hsieh
- Applicant: Shau-Lin Shue , Cheng-Lin Huang , Ching-Hua Hsieh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A via structure having improved reliability and performance and methods of forming the same are provided. The via structure includes a first-layer conductive line, a second-layer conductive line, and a via electrically coupled between the first-layer conductive line and the second-layer conductive line. The via has a substantially tapered profile and substantially extends into a recess in the first-layer conductive line.
Public/Granted literature
- US20070126121A1 Via structure with improved reliability Public/Granted day:2007-06-07
Information query
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