发明授权
US08264663B2 System for accumulating exposure energy information of wafer and management method of mask for exposure utilizing exposure energy information of wafer accumulated with the system 有权
用于累积晶片的曝光能量信息的系统和利用系统累积的晶片的曝光能量信息进行曝光的管理方法

  • 专利标题: System for accumulating exposure energy information of wafer and management method of mask for exposure utilizing exposure energy information of wafer accumulated with the system
  • 专利标题(中): 用于累积晶片的曝光能量信息的系统和利用系统累积的晶片的曝光能量信息进行曝光的管理方法
  • 申请号: US11956259
    申请日: 2007-12-13
  • 公开(公告)号: US08264663B2
    公开(公告)日: 2012-09-11
  • 发明人: Woon-Sig Hong
  • 申请人: Woon-Sig Hong
  • 申请人地址: KR Pyungtaek
  • 专利权人: Cymer Korea Inc.
  • 当前专利权人: Cymer Korea Inc.
  • 当前专利权人地址: KR Pyungtaek
  • 代理机构: Birch, Stewart, Kolasch & Birch, LLP
  • 优先权: KR10-2007-0005539 20070118
  • 主分类号: G03B27/52
  • IPC分类号: G03B27/52 G01N21/00 G06K9/00
System for accumulating exposure energy information of wafer and management method of mask for exposure utilizing exposure energy information of wafer accumulated with the system
摘要:
Disclosed is a management method of a mask for exposure utilizing exposure energy information of a wafer. According to the present invention, in case of exposing wafers in exposure apparatuses, information on masks loaded on exposure apparatuses are calculated from the exposure apparatuses, the light energy values applied during the exposure of wafers by the corresponding masks are calculated, the calculated light energy values are stored in the data server, the same data are collected from all wafer exposure processes performed at plural exposure apparatuses within the semiconductor FAB and the exposure information about the exposure energy relating to plural masks used by plural exposure apparatuses are accumulated and managed. Accordingly, the exposure degree of a mask about the exposure energy, as a direct cause of the contamination of masks such as the crystal growth and haze, is directly calculated and then defects of masks are predicted together with measures according that, so that deterioration of the yield of the semiconductor is prevented and the yield of the semiconductor is increased.
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