发明授权
- 专利标题: Sensing memory cells
- 专利标题(中): 感应记忆体
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申请号: US12948469申请日: 2010-11-17
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公开(公告)号: US08264879B2公开(公告)日: 2012-09-11
- 发明人: Seiichi Aritome
- 申请人: Seiichi Aritome
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc
- 当前专利权人: Micron Technology, Inc
- 当前专利权人地址: US ID Boise
- 代理机构: Brooks, Cameron & Huebsch, PLLC
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
Methods, devices, modules, and systems for operating memory cells are taught. A method for operating memory cells includes programming at least one of the memory cells to one of a number of states. Operating memory cells also includes programming at least another one of the memory cells, which is adjacent to the programmed at least one of the memory cells, to one of a different number of states. Operating memory cells also includes sensing non-erased states of the memory cells using at least one common voltage level.
公开/授权文献
- US20110058417A1 SENSING MEMORY CELLS 公开/授权日:2011-03-10
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