发明授权
- 专利标题: Multi-level striping and truncation channel-equalization for flash-memory system
- 专利标题(中): 闪存系统的多级条带化和截断通道均衡
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申请号: US12475457申请日: 2009-05-29
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公开(公告)号: US08266367B2公开(公告)日: 2012-09-11
- 发明人: Frank Yu , Charles C. Lee , Abraham C. Ma , Myeongjin Shin
- 申请人: Frank Yu , Charles C. Lee , Abraham C. Ma , Myeongjin Shin
- 申请人地址: US CA San Jose
- 专利权人: Super Talent Electronics, Inc.
- 当前专利权人: Super Talent Electronics, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: gPatent LLC
- 代理商 Stuart T. Auvinen
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F13/00 ; G06F13/28
摘要:
Truncation reduces the available striped data capacity of all flash channels to the capacity of the smallest flash channel. A solid-state disk (SSD) has a smart storage switch salvages flash storage removed from the striped data capacity by truncation. Extra storage beyond the striped data capacity is accessed as scattered data that is not striped. The size of the striped data capacity is reduced over time as more bad blocks appear. A first-level striping map stores striped and scattered capacities of all flash channels and maps scattered and striped data. Each flash channel has a Non-Volatile Memory Device (NVMD) with a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory in the NVMD. Wear-leveling and bad block remapping are preformed by each NVMD. Source and shadow flash blocks are recycled by the NVMD. Two levels of smart storage switches enable three-level controllers.
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