发明授权
- 专利标题: Methods for forming arrays of small, closely spaced features
- 专利标题(中): 用于形成小的,紧密间隔的特征的阵列的方法
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申请号: US12498951申请日: 2009-07-07
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公开(公告)号: US08266558B2公开(公告)日: 2012-09-11
- 发明人: David H. Wells
- 申请人: David H. Wells
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed patterns of crossing elongate features with pillars at the intersections. Spacers are simultaneously applied to sidewalls of both sets of crossing lines to produce a pitch-doubled grid pattern. The pillars facilitate rows of spacers bridging columns of spacers.
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