Invention Grant
- Patent Title: Crystalline carbonaceous material with controlled interlayer spacing and method of preparing same
- Patent Title (中): 具有受控层间距的结晶碳质材料及其制备方法
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Application No.: US13005503Application Date: 2011-01-12
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Publication No.: US08268283B2Publication Date: 2012-09-18
- Inventor: Bok-Hyun Ka , Kyeu-Yoon Sheem , Da-Un Han , Hyun-Uk Jo , Sumihito Ishida , Eui-Hwan Song
- Applicant: Bok-Hyun Ka , Kyeu-Yoon Sheem , Da-Un Han , Hyun-Uk Jo , Sumihito Ishida , Eui-Hwan Song
- Applicant Address: KR Gongse-dong, Giheung-gu, Yongin-si, Gyeonggi-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Gongse-dong, Giheung-gu, Yongin-si, Gyeonggi-do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2010-0057760 20100617
- Main IPC: C01B31/04
- IPC: C01B31/04
Abstract:
A crystalline carbon material with controlled interlayer spacing and a method of manufacturing the crystalline carbon material are disclosed. The crystalline carbon material has peaks of a (002) plane at 2θ=23°±5.0° and 2θ=26.5°±1.0° when X-ray diffraction is measured using a CuKα ray. The peak height at 2θ=23°±5.0° is higher than the one at 2θ=26.5°±1.0°.
Public/Granted literature
- US20110311431A1 CRYSTALLINE CARBONACEOUS MATERIAL WITH CONTROLLED INTERLAYER SPACING AND METHOD OF PREPARING SAME Public/Granted day:2011-12-22
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