发明授权
- 专利标题： Edge-emitting semiconductor laser chip
- 专利标题（中）： 边缘发射半导体激光芯片
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申请号： US13011326申请日： 2011-01-21
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公开(公告)号： US08268659B2公开(公告)日： 2012-09-18
- 发明人: Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
- 申请人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
- 申请人地址： DE Regensburg
- 专利权人： Osram Opto Semiconductors GmbH
- 当前专利权人： Osram Opto Semiconductors GmbH
- 当前专利权人地址： DE Regensburg
- 代理机构： Cozen O'Connor
- 优先权： DE102006030215 20060630
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
公开/授权文献
- US20110177634A1 Edge-Emitting Semiconductor Laser Chip 公开/授权日：2011-07-21
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