发明授权
- 专利标题: SiGe photodiode
- 专利标题(中): SiGe光电二极管
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申请号: US12919638申请日: 2009-03-09
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公开(公告)号: US08269303B2公开(公告)日: 2012-09-18
- 发明人: Junichi Fujikata , Toru Tatsumi , Akihito Tanabe , Jun Ushida , Daisuke Okamoto , Kenichi Nishi
- 申请人: Junichi Fujikata , Toru Tatsumi , Akihito Tanabe , Jun Ushida , Daisuke Okamoto , Kenichi Nishi
- 申请人地址: JP Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-057961 20080307
- 国际申请: PCT/JP2009/054429 WO 20090309
- 国际公布: WO2009/110632 WO 20090911
- 主分类号: H01L31/105
- IPC分类号: H01L31/105
摘要:
The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.
公开/授权文献
- US20110012221A1 SiGe PHOTODIODE 公开/授权日:2011-01-20