Invention Grant
- Patent Title: Semiconductor device having improved heat dissipation capabilities
- Patent Title (中): 具有改善的散热能力的半导体器件
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Application No.: US11836579Application Date: 2007-08-09
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Publication No.: US08269338B2Publication Date: 2012-09-18
- Inventor: Ta-Te Chou , Xiong-Jie Zhang , Xian Li , Hai Fu , Yong-Qi Tian
- Applicant: Ta-Te Chou , Xiong-Jie Zhang , Xian Li , Hai Fu , Yong-Qi Tian
- Applicant Address: US NY Hauppauge
- Assignee: Vishay General Semiconductor LLC
- Current Assignee: Vishay General Semiconductor LLC
- Current Assignee Address: US NY Hauppauge
- Agency: Mayer & Williams PC
- Agent Karin L. Williams; Stuart H. Mayer
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A semiconductor device mountable to a substrate includes a semiconductor die and an electrically conductive lead frame having first and second end portions and a first attachment surface and a second attachment surface. The die electrically contacts the first end portion of the lead frame on the first attachment surface. An externally exposed housing encloses the semiconductor die and the first end portion of the lead frame, said housing including a metallic plate facing the second attachment surface of the lead frame.
Public/Granted literature
- US20080036057A1 SEMICONDUCTOR DEVICE HAVING IMPROVED HEAT DISSIPATION CAPABILITIES Public/Granted day:2008-02-14
Information query
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