Invention Grant
US08269561B1 Systems and methods for CMOS power amplifiers with power mode control
有权
具有功率模式控制功能的CMOS功率放大器的系统和方法
- Patent Title: Systems and methods for CMOS power amplifiers with power mode control
- Patent Title (中): 具有功率模式控制功能的CMOS功率放大器的系统和方法
-
Application No.: US13104898Application Date: 2011-05-10
-
Publication No.: US08269561B1Publication Date: 2012-09-18
- Inventor: Yunseo Park , Chang-Ho Lee
- Applicant: Yunseo Park , Chang-Ho Lee
- Applicant Address: KR Gyunngi-Do
- Assignee: Samsung Electro-Mechanics
- Current Assignee: Samsung Electro-Mechanics
- Current Assignee Address: KR Gyunngi-Do
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
Embodiments of the invention may provide CMOS power amplifiers with power mode control to provide the desired power-added efficiency (PAE), idle current, output power, and Adjacent Channel Leakage Ratio (ACLR). For instance, there may be a multi-mode WCDMA CMOS RF power amplifier having high/medium/low output power modes aimed to achieve high PAE and low idle current in a portable wireless environment. According to an example embodiment, a CMOS RF power amplifier may provide a plurality of separate signal paths for purposes of supporting multi-power modes. For example, there may be a first signal path which supports a high-power mode, and a second path which is subsequently divided into two recursive signal paths or sub-paths to support respective medium and low-power modes. One of the three power modes may be selected or controlled using bias control switches in the first and second paths.
Information query