Invention Grant
- Patent Title: Tunable resonant circuit in an integrated circuit
- Patent Title (中): 集成电路中的可调谐谐振电路
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Application No.: US12906017Application Date: 2010-10-15
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Publication No.: US08269566B2Publication Date: 2012-09-18
- Inventor: Parag Upadhyaya , Vassili Kireev
- Applicant: Parag Upadhyaya , Vassili Kireev
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent LeRoy D. Maunu
- Main IPC: H03B5/12
- IPC: H03B5/12

Abstract:
A tunable resonant circuit includes first and second capacitors that provide a matched capacitance between first and second electrodes of the first and second capacitors. A deep-well arrangement includes a first well disposed within a second well in a substrate. The first and second capacitors are each disposed on the first well. Two channel electrodes of a first transistor are respectively coupled to the second electrode of the first capacitor and the second electrode of the second capacitor. Two channel electrodes of a second transistor are respectively coupled to the second electrode of the first capacitor and to ground. Two channel electrodes of the third transistor are respectively coupled to the second electrode of the second capacitor and to ground. The gate electrodes of the first, second, and third transistors are responsive to a tuning signal, and an inductor is coupled between the first electrodes of the first and second capacitors.
Public/Granted literature
- US20120092081A1 TUNABLE RESONANT CIRCUIT IN AN INTEGRATED CIRCUIT Public/Granted day:2012-04-19
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