发明授权
- 专利标题： Method for production of a radiation-emitting semiconductor chip
- 专利标题（中）： 辐射发射半导体芯片的制造方法
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申请号： US13027810申请日： 2011-02-15
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公开(公告)号： US08273593B2公开(公告)日： 2012-09-25
- 发明人: Berthold Hahn , Stephan Kaiser , Volker Härle
- 申请人： Berthold Hahn , Stephan Kaiser , Volker Härle
- 申请人地址： DE Regensburg
- 专利权人： Osram Opto Semiconductors GmbH
- 当前专利权人： Osram Opto Semiconductors GmbH
- 当前专利权人地址： DE Regensburg
- 代理机构： Cozen O'Connor
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/30
摘要：
A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.