发明授权
US08274110B2 Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory
有权
在横向阵列存储器中提供高驱动电流的垂直取向的半导体选择装置
- 专利标题： Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory
- 专利标题（中）： 在横向阵列存储器中提供高驱动电流的垂直取向的半导体选择装置
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申请号： US12469563申请日： 2009-05-20
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公开(公告)号： US08274110B2公开(公告)日： 2012-09-25
- 发明人: Gurtej Sandhu , John K. Zahurak , Jay Parks
- 申请人： Gurtej Sandhu , John K. Zahurak , Jay Parks
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first doped region is electrically coupled to one or more first silicide layers on the surface of the base. The second doped region is electrically coupled to one of a plurality of second silicide layers on the upper surface of the mesa. A gate conductor is provided on one or more sidewalls of the mesa.
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