Invention Grant
- Patent Title: Chip bump structure and method for forming the same
- Patent Title (中): 芯片凸块结构及其形成方法
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Application No.: US13104597Application Date: 2011-05-10
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Publication No.: US08274150B2Publication Date: 2012-09-25
- Inventor: Cheng Tang Huang
- Applicant: Cheng Tang Huang
- Applicant Address: TW Hsinchu
- Assignee: Chipmos Technologies Inc.
- Current Assignee: Chipmos Technologies Inc.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Priority: TW99116772A 20100526
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A chip bump structure is formed on a substrate. The substrate includes at least one contact pad and a dielectric layer. The dielectric layer has at least one opening. The at least one opening exposes the at least one contact pad. The chip bump structure includes at least one elastic bump, at least one first metal layer, at least one second metal layer, and at least one solder ball. The at least one elastic bump covers a central portion of the at least one contact pad. The at least one first metal layer covers the at least one elastic bump. The at least one first metal layer has a portion of the at least one contact pad. The portion of the at least one contact pad is not overlaid by the at least one elastic bump. The at least one second metal layer is formed on a portion of the at least one first metal layer. The portion of the at least one first metal layer is located on the top of the at least one elastic bump. The at least one solder ball is formed on the at least one second metal layer. The at least one solder ball is also on the top of the at least one elastic bump.
Public/Granted literature
- US20110291273A1 CHIP BUMP STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2011-12-01
Information query
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