An accelerated failure indicator embedded on a semiconductor chip includes an insulating region; a circuit located inside the insulating region; a heating element located inside the insulating region, the heating element configured to heat the circuit to a temperature higher than an operating temperature of the semiconductor chip; and a reliability monitor configured to monitor the circuit for degradation, and further configured to trigger an alarm in the event that the degradation of the circuit exceeds a predetermined threshold. A method of operating an accelerated failure indicator embedded on a semiconductor chip includes determining an operating temperature of the semiconductor chip; heating a circuit located inside an insulating region of the accelerated failure indicator to a temperature higher than the determined operating temperature; monitoring the circuit for degradation; and triggering an alarm in the event that the degradation of the circuit exceeds a predetermined threshold.