Invention Grant
- Patent Title: Fully differential, high Q, on-chip, impedance matching section
- Patent Title (中): 全差分,高Q,片上,阻抗匹配部分
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Application No.: US13047699Application Date: 2011-03-14
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Publication No.: US08274353B2Publication Date: 2012-09-25
- Inventor: Carol Barrett , Tom McKay , Subhas Bothra
- Applicant: Carol Barrett , Tom McKay , Subhas Bothra
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox, PLLC
- Main IPC: H01F5/00
- IPC: H01F5/00

Abstract:
An inductor circuit is disclosed. The inductor circuit includes a first in-silicon inductor and a second in-silicon inductor each having multiple turns. A portion of the multiple turns of the second in-silicon inductor is formed between turns of the first in-silicon inductor. The first and second in-silicon inductors are configured such that a differential current flowing through the first in-silicon inductor and the second in-silicon inductor flows in a same direction in corresponding turns of inductors.
Public/Granted literature
- US20110163831A1 Fully Differential, High Q, On-Chip, Impedance Matching Section Public/Granted day:2011-07-07
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