发明授权
US08274762B2 Methods and systems for using resistivity of sensor film in an element shunt
有权
在元件分流中使用传感器膜电阻率的方法和系统
- 专利标题： Methods and systems for using resistivity of sensor film in an element shunt
- 专利标题（中）： 在元件分流中使用传感器膜电阻率的方法和系统
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申请号： US12130389申请日： 2008-05-30
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公开(公告)号： US08274762B2公开(公告)日： 2012-09-25
- 发明人: Satoru Araki , Ying Hong , Edward Hin Pong Lee , Tsann Lin , David John Seagle
- 申请人： Satoru Araki , Ying Hong , Edward Hin Pong Lee , Tsann Lin , David John Seagle
- 申请人地址： NL Amsterdam
- 专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址： NL Amsterdam
- 代理机构： Zilka-Kotab, PC
- 主分类号： G11B5/33
- IPC分类号： G11B5/33
摘要：
A system in one approach includes a sensor stack formed of a plurality of thin film layers; a shunt formed of at least some of the same layers as the sensor stack, the shunt being spaced from the sensor stack; a first lead coupled to the sensor stack and the shunt; and a second lead coupled to the sensor stack and the shunt. A method in one embodiment includes forming a plurality of thin film layers; removing a portion of the thin film layers for defining at least a portion of a sensor stack and at least a portion of a shunt spaced front the sensor stack; forming a first lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt and a second lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt. Additional systems and methods are also presented.