Invention Grant
US08274818B2 Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same
有权
磁阻元件，磁存储单元和使用其的磁性随机存取存储器
- Patent Title: Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same
- Patent Title (中): 磁阻元件，磁存储单元和使用其的磁性随机存取存储器
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Application No.: US12185983Application Date: 2008-08-05
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Publication No.: US08274818B2Publication Date: 2012-09-25
- Inventor: Hideo Ohno , Shoji Ikeda , Young Min Lee , Jun Hayakawa
- Applicant: Hideo Ohno , Shoji Ikeda , Young Min Lee , Jun Hayakawa
- Applicant Address: JP Miyagi JP Tokyo
- Assignee: Tohoku University,Hitachi, Ltd.
- Current Assignee: Tohoku University,Hitachi, Ltd.
- Current Assignee Address: JP Miyagi JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Provided is a high-speed and ultra-low-power-consumption nonvolatile memory having a high temperature stability at a zero magnetic field. In a tunnel magnetoresistive film constituting a nonvolatile magnetic memory that employs a writing method using a spin-transfer torque, an insulating layer and a nonmagnetic conductive layer are stacked above a ferromagnetic free layer.
Public/Granted literature
- US20100034014A1 Magnetoresistive Element, Magnetic Memory Cell and Magnetic Random Access Memory Using the Same Public/Granted day:2010-02-11
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