发明授权
US08274833B2 Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
有权
缓解非易失性存储设备中的后台模式和程序干扰造成的数据损坏
- 专利标题: Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
- 专利标题(中): 缓解非易失性存储设备中的后台模式和程序干扰造成的数据损坏
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申请号: US13354453申请日: 2012-01-20
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公开(公告)号: US08274833B2公开(公告)日: 2012-09-25
- 发明人: Vishal Sarin , Jung-Sheng Hoei , Frankie F. Roohparvar
- 申请人: Vishal Sarin , Jung-Sheng Hoei , Frankie F. Roohparvar
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Leffert Jay & Polglaze, P. A.
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A write algorithm is used to remove errors due to back pattern effects, cell-to-cell capacitive coupling, and program disturb in memory cells. Original data to be programmed is adjusted prior to an initial programming operation of the memory cells. The original data is then programmed into the memory cells in another programming operation. A read adjustment weight data value is associated with each series string of memory cells. The weight data value is used to compensate data read during an initial word line read. The weight data value is updated after each read and read adjustment such that the adjusted weight data value is used on the subsequent read operations.
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