Invention Grant
- Patent Title: Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate
- Patent Title (中): 制造薄膜晶体管基板的方法和用于薄膜晶体管基板中的光敏组合物
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Application No.: US12170487Application Date: 2008-07-10
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Publication No.: US08278021B2Publication Date: 2012-10-02
- Inventor: Hoon Kang , Jae-sung Kim , Yang-ho Jung , Hi-kuk Lee
- Applicant: Hoon Kang , Jae-sung Kim , Yang-ho Jung , Hi-kuk Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2007-0073496 20070723
- Main IPC: C08J3/28
- IPC: C08J3/28 ; G03C7/00 ; G03C1/72 ; C08F2/46

Abstract:
Disclosed is a method of producing a thin film transistor substrate having high light sensitivity, heat-resistance, impact resistance, and a photosensitive composition used by the same, the method including forming data wires on an insulating substrate, forming an organic insulating film on the data wires by applying a photosensitive composition comprising a terpolymer, where the terpolymer is derived from monomers of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, an unsaturated epoxy group-containing compound, and an olefinic compound.
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