Invention Grant
US08278161B2 Method for fabricating a thin film transistor array substrate with a thinned protective film over a storage capacitor
有权
用于在存储电容器上制造具有薄化保护膜的薄膜晶体管阵列基板的方法
- Patent Title: Method for fabricating a thin film transistor array substrate with a thinned protective film over a storage capacitor
- Patent Title (中): 用于在存储电容器上制造具有薄化保护膜的薄膜晶体管阵列基板的方法
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Application No.: US12019063Application Date: 2008-01-24
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Publication No.: US08278161B2Publication Date: 2012-10-02
- Inventor: Sung Jin Kim , Woo Young Choi
- Applicant: Sung Jin Kim , Woo Young Choi
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Brinks Hofer Gilson & Lione
- Priority: KRP2004-101447 20041203
- Main IPC: H01L21/32
- IPC: H01L21/32 ; H01L21/335
Abstract:
A thin film transistor array substrate and a fabricating method are disclosed. A gate line and a data line cross each other and a thin film transistor (TFT) is provided at the intersection between the gate and data lines. A protective film covers the data line and the thin film transistor and has a contact hole exposing a drain electrode of the TFT. A pixel electrode is connected, via the contact hole, to the drain electrode of the TFT. A storage capacitor includes a gate insulating film between the pixel electrode and the gate line and/or a common line. Some or all of the protective film within the storage capacitor is removed such that the storage capacitor contains no protective film or a layer of protective film that is thinner than the portion covering the TFT.
Public/Granted literature
- US20080113475A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF Public/Granted day:2008-05-15
Information query
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