发明授权
US08278161B2 Method for fabricating a thin film transistor array substrate with a thinned protective film over a storage capacitor
有权
用于在存储电容器上制造具有薄化保护膜的薄膜晶体管阵列基板的方法
- 专利标题： Method for fabricating a thin film transistor array substrate with a thinned protective film over a storage capacitor
- 专利标题（中）： 用于在存储电容器上制造具有薄化保护膜的薄膜晶体管阵列基板的方法
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申请号： US12019063申请日： 2008-01-24
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公开(公告)号： US08278161B2公开(公告)日： 2012-10-02
- 发明人: Sung Jin Kim , Woo Young Choi
- 申请人： Sung Jin Kim , Woo Young Choi
- 申请人地址： KR Seoul
- 专利权人： LG Display Co., Ltd.
- 当前专利权人： LG Display Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： Brinks Hofer Gilson & Lione
- 优先权： KRP2004-101447 20041203
- 主分类号： H01L21/32
- IPC分类号： H01L21/32 ; H01L21/335
摘要：
A thin film transistor array substrate and a fabricating method are disclosed. A gate line and a data line cross each other and a thin film transistor (TFT) is provided at the intersection between the gate and data lines. A protective film covers the data line and the thin film transistor and has a contact hole exposing a drain electrode of the TFT. A pixel electrode is connected, via the contact hole, to the drain electrode of the TFT. A storage capacitor includes a gate insulating film between the pixel electrode and the gate line and/or a common line. Some or all of the protective film within the storage capacitor is removed such that the storage capacitor contains no protective film or a layer of protective film that is thinner than the portion covering the TFT.
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