发明授权
US08278167B2 Method and structure for integrating capacitor-less memory cell with logic
有权
将无电容器存储单元与逻辑集成的方法和结构
- 专利标题： Method and structure for integrating capacitor-less memory cell with logic
- 专利标题（中）： 将无电容器存储单元与逻辑集成的方法和结构
-
申请号： US12338404申请日： 2008-12-18
-
公开(公告)号： US08278167B2公开(公告)日： 2012-10-02
- 发明人: Gurtej S. Sandhu
- 申请人： Gurtej S. Sandhu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a capacitor-less memory cell on the intermediate semiconductor substrate. Integrated circuits with capacitor-less memory cells formed on a surface of a logic device are also disclosed, as are multi-core microprocessors including such integrated circuits.
公开/授权文献
信息查询
IPC分类:
