发明授权
- 专利标题： Method of fabricating gate structures
- 专利标题（中）： 栅极结构的制作方法
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申请号： US12827512申请日： 2010-06-30
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公开(公告)号： US08278173B2公开(公告)日： 2012-10-02
- 发明人: Peng-Soon Lim , Chia-Pin Lin , Kuang-Yuan Hsu
- 申请人： Peng-Soon Lim , Chia-Pin Lin , Kuang-Yuan Hsu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
A method includes: forming first and second projections; forming a first structure engaging the first projection, and including: a non-metallic conductive layer, and a first opening over the conductive layer; forming a second structure engaging the second projection, and including: a second opening; and conformally depositing a pure metal in the first and second openings. A different aspect involves an apparatus including: a first device that includes a first projection and a first gate structure, the first projection extending from a substrate, and the first gate structure engaging the first projection, and including an opening, and a conformal, pure metal disposed in the opening; and a second device that includes a second projection and a second gate structure, the second projection extending from the substrate, and the second gate structure engaging the second projection, and including a silicide including a metal that is the same metal disposed in the opening.
公开/授权文献
- US20120001266A1 GATE STRUCTURES AND METHOD OF FABRICATING SAME 公开/授权日：2012-01-05
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