Method of fabricating gate structures

Invention Grant

US08278173B2 Method of fabricating gate structures 有权

Title translation: 栅极结构的制作方法

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Patent Title: Method of fabricating gate structures
Patent Title (中): 栅极结构的制作方法
Application No.: US12827512

Application Date: 2010-06-30
Publication No.: US08278173B2

Publication Date: 2012-10-02
Inventor: Peng-Soon Lim , Chia-Pin Lin , Kuang-Yuan Hsu
Applicant: Peng-Soon Lim , Chia-Pin Lin , Kuang-Yuan Hsu
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Haynes and Boone, LLP
Main IPC: H01L21/8234
IPC: H01L21/8234

Abstract:

A method includes: forming first and second projections; forming a first structure engaging the first projection, and including: a non-metallic conductive layer, and a first opening over the conductive layer; forming a second structure engaging the second projection, and including: a second opening; and conformally depositing a pure metal in the first and second openings. A different aspect involves an apparatus including: a first device that includes a first projection and a first gate structure, the first projection extending from a substrate, and the first gate structure engaging the first projection, and including an opening, and a conformal, pure metal disposed in the opening; and a second device that includes a second projection and a second gate structure, the second projection extending from the substrate, and the second gate structure engaging the second projection, and including a silicide including a metal that is the same metal disposed in the opening.

Abstract(Chinese):

一种方法包括：形成第一和第二突起; 形成与所述第一突起接合的第一结构，并且包括：非金属导电层和所述导电层上的第一开口; 形成与第二突起接合的第二结构，并且包括：第二开口; 并且在第一和第二开口中共形沉积纯金属。不同的方面涉及一种装置，包括：第一装置，其包括第一突起和第一栅极结构，第一突起从基板延伸，第一栅极结构与第一突起接合，并且包括开口和保形的纯的设置在开口中的金属; 以及第二装置，其包括第二突起和第二栅极结构，所述第二突起从所述基板延伸，所述第二栅极结构接合所述第二突起，并且包括包含设置在所述开口中的相同金属的金属的硅化物。

Public/Granted literature

US20120001266A1 GATE STRUCTURES AND METHOD OF FABRICATING SAME Public/Granted day:2012-01-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺