Invention Grant
- Patent Title: Metal-semiconductor intermixed regions
- Patent Title (中): 金属半导体混合区域
-
Application No.: US13012043Application Date: 2011-01-24
-
Publication No.: US08278200B2Publication Date: 2012-10-02
- Inventor: Christian Lavoie , Tak H. Ning , Ahmet S. Ozcan , Bin Yang , Zhen Zhang
- Applicant: Christian Lavoie , Tak H. Ning , Ahmet S. Ozcan , Bin Yang , Zhen Zhang
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corpration,Globalfoudries Inc.
- Current Assignee: International Business Machines Corpration,Globalfoudries Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Harrington & Smith
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
In one exemplary embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, said operations including: depositing a first layer having a first metal on a surface of a semiconductor structure, where depositing the first layer creates a first intermix region at an interface of the first layer and the semiconductor structure; removing a portion of the deposited first layer to expose the first intermix region; depositing a second layer having a second metal on the first intermix region, where depositing the second layer creates a second intermix region at an interface of the second layer and the first intermix region; removing a portion of the deposited second layer to expose the second intermix region; and performing at least one anneal on the semiconductor structure.
Public/Granted literature
- US20120190192A1 Metal-Semiconductor Intermixed Regions Public/Granted day:2012-07-26
Information query
IPC分类: