Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US11054616Application Date: 2005-02-10
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Publication No.: US08278213B2Publication Date: 2012-10-02
- Inventor: Koujiro Kameyama , Akira Suzuki , Yoshio Okayama
- Applicant: Koujiro Kameyama , Akira Suzuki , Yoshio Okayama
- Applicant Address: JP Moriguchi-shi
- Assignee: SANYO Electric Co., Ltd.
- Current Assignee: SANYO Electric Co., Ltd.
- Current Assignee Address: JP Moriguchi-shi
- Agency: Morrison & Foerster LLP
- Priority: JP2004-040408 20040217
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/48
Abstract:
This invention improves reliability of a semiconductor device and a manufacturing method thereof. A glass substrate is bonded on a surface of a silicon wafer formed with pad electrodes. Next, via holes are formed from a back surface of the silicon wafer to pad electrodes, and a groove is formed extending along a center line of a dicing line and penetrating the silicon wafer from its back surface. After then, in processes including heating treatment, cushioning pads, wirings, a solder mask, and solder balls are formed on the back surface of the silicon wafer. Finally, the silicon wafer bolstered by the glass substrate is separated into individual silicon dice by dicing.
Public/Granted literature
- US20050194670A1 Semiconductor device and manufacturing method of the same Public/Granted day:2005-09-08
Information query
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