发明授权
- 专利标题： Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the same
- 专利标题（中）： 具有用于半导体器件的多层扩散阻挡层的电导线及其形成方法
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申请号： US13241415申请日： 2011-09-23
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公开(公告)号： US08278218B2公开(公告)日： 2012-10-02
- 发明人: Joon Seok Oh , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Jeong Tae Kim , Nam Yeal Lee , Jae Hong Kim
- 申请人： Joon Seok Oh , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Jeong Tae Kim , Nam Yeal Lee , Jae Hong Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2008-0073170 20080725
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoxOy layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
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