发明授权
- 专利标题: Antifuse element for integrated circuit device
- 专利标题(中): 集成电路器件用防尘元件
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申请号: US13096995申请日: 2011-04-28
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公开(公告)号: US08278732B1公开(公告)日: 2012-10-02
- 发明人: Jar-Ming Ho , Yi-Nan Chen , Hsien-Wen Liu
- 申请人: Jar-Ming Ho , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址: TW Taoyuan
- 专利权人: Nanya Technology Corporation
- 当前专利权人: Nanya Technology Corporation
- 当前专利权人地址: TW Taoyuan
- 主分类号: H01L23/52
- IPC分类号: H01L23/52
摘要:
An antifuse element for an integrated circuit is provided, including a conductive region formed in a semiconductor substrate, extending along a first direction; a dielectric layer formed on a portion of the conductive region; a first conductive plug formed on the dielectric layer; a second conductive plug formed on another portion of the conductive region; and a first conductive member formed over the first and second conductive plugs, extending along a second direction perpendicular to the first direction; and a second conductive member formed over the second conductive plug extending along the second direction, wherein the first conductive member intersects with the conductive region, having a first overlapping area therebetween, and the dielectric layer and the conductive region have a second overlapping area therebetween, and a ratio between the first overlapping area and the second overlapping area is about 1.5:1 to 3:1.
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