Invention Grant
- Patent Title: Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
- Patent Title (中): 晶体半导体膜,半导体器件及其制造方法
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Application No.: US11715473Application Date: 2007-03-08
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Publication No.: US08278739B2Publication Date: 2012-10-02
- Inventor: Tomoaki Moriwaka
- Applicant: Tomoaki Moriwaka
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2006-077484 20060320
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
A method for manufacturing is: forming an insulating film over a substrate; forming an amorphous semiconductor film over the insulating film; forming over the amorphous semiconductor film, a silicon nitride film in which a film thickness is equal to or more than 200 nm and equal to or less than 1000 nm, equal to or less than 10 atomic % of oxygen is included, and a relative proportion of nitrogen to silicon is equal to or more than 1.3 and equal to or less than 1.5; irradiating the amorphous semiconductor film with a continuous-wave laser light or a laser light with repetition rate of equal to or more than the wave length of 10 MHz transmitting the silicon nitride film to melt and later crystallize the amorphous semiconductor film to form a crystalline semiconductor film.
Public/Granted literature
- US20070222038A1 Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof Public/Granted day:2007-09-27
Information query
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