Invention Grant
- Patent Title: Semiconductor apparatus having a two-side heat radiation structure
- Patent Title (中): 具有双面散热结构的半导体装置
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Application No.: US12453784Application Date: 2009-05-21
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Publication No.: US08278747B2Publication Date: 2012-10-02
- Inventor: Kuniaki Mamitsu , Tetsuo Fujii
- Applicant: Kuniaki Mamitsu , Tetsuo Fujii
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2008-134005 20080522
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor apparatus having a first surface and a second surface opposite to the first surface includes: a semiconductor chip having a front side and a backside; a first heat radiation member electrically and thermally coupled with the backside of the chip; a second heat radiation member electrically and thermally coupled with the front side of the chip; and a resin mold sealing the first and second heat radiation members together with the chip. At least one of the first and second heat radiation members is exposed on both of the first and second surfaces.
Public/Granted literature
- US20090289351A1 Semiconductor apparatus having both-side heat radiation structure and method for manufacturing the same Public/Granted day:2009-11-26
Information query
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