Invention Grant
- Patent Title: Semiconductor device and production method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12952720Application Date: 2010-11-23
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Publication No.: US08278753B2Publication Date: 2012-10-02
- Inventor: Kiyotaka Tsukada , Tetsuya Muraki , Atsunari Yamashita , Yoshitomo Tomida
- Applicant: Kiyotaka Tsukada , Tetsuya Muraki , Atsunari Yamashita , Yoshitomo Tomida
- Applicant Address: JP Ogaki-shi
- Assignee: Ibiden Co., Ltd.
- Current Assignee: Ibiden Co., Ltd.
- Current Assignee Address: JP Ogaki-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-266872 20091124
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
The semiconductor device comprises a support plate; a semiconductor element; and conductor posts consisting of a conductor having a first end at one end and a second end at the other end, the second end being connected to the semiconductor element and the conductor posts being connected to the support plate at a position on the side of the second end that is closer to the first end, wherein the conductor posts have a heat conductivity of approximately 200 W/m·K or higher and a Vickers hardness of approximately 70 or lower.
Public/Granted literature
- US20110121448A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF Public/Granted day:2011-05-26
Information query
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