发明授权
- 专利标题: Heat dissipation structure for electronic device and fabrication method thereof
- 专利标题(中): 电子器件的散热结构及其制造方法
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申请号: US12975326申请日: 2010-12-21
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公开(公告)号: US08278755B2公开(公告)日: 2012-10-02
- 发明人: Ra-Min Tain , Ming-Ji Dai , I-Nan Lin
- 申请人: Ra-Min Tain , Ming-Ji Dai , I-Nan Lin
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 优先权: TW99126890A 20100812
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/28
摘要:
A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.
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