Invention Grant
- Patent Title: Method of manufacturing semiconductor optical element
- Patent Title (中): 制造半导体光学元件的方法
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Application No.: US13438028Application Date: 2012-04-03
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Publication No.: US08279905B2Publication Date: 2012-10-02
- Inventor: Kazuhisa Takagi
- Applicant: Kazuhisa Takagi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd
- Priority: JP2006-276837 20061010
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A method of manufacturing a semiconductor optical element having an active layer containing quantum dots, in which density of the quantum dots in a resonator direction in a portion of the active layer in which density of photons is high, relative to the density of the quantum dots in a portion of the active layer in which the density of photons is relatively low, includes forming the quantum dots in the active layer so that the distribution density is uniform in a resonator direction; and diffusing or implanting an impurity non-uniformly in the resonator direction in the active layer in which quantum dots are uniformly distributed, thereby disordering some of the quantum dots and forming a non-uniform density distribution of the quantum dots in the resonator direction in the active layer.
Public/Granted literature
- US20120190147A1 METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT Public/Granted day:2012-07-26
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