Invention Grant
- Patent Title: Memory devices and encoding and/or decoding methods
- Patent Title (中): 存储器件和编码和/或解码方法
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Application No.: US12379746Application Date: 2009-02-27
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Publication No.: US08281217B2Publication Date: 2012-10-02
- Inventor: Yong June Kim , Jae Hong Kim , Jun Jin Kong
- Applicant: Yong June Kim , Jae Hong Kim , Jun Jin Kong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0024930 20080318
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Memory devices and/or encoding/decoding methods are provided. A memory device may include: a memory cell array; an internal decoder configured to apply, to a first codeword read from the memory cell array, a first decoding scheme selected based on a characteristic of a first channel in which the first codeword is read to perform error control codes (ECC) decoding of the first codeword, and apply, to a second codeword read from the memory cell array, a second decoding scheme selected based on a characteristic of a second channel in which the second codeword is read to perform the ECC decoding of the second codeword; and an external decoder configured to apply an external decoding scheme to the ECC-decoded first codeword and the ECC-decoded second codeword to perform the ECC decoding of the first codeword and the second codeword.
Public/Granted literature
- US20090241008A1 Memory devices and encoding and/or decoding methods Public/Granted day:2009-09-24
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