Invention Grant
- Patent Title: Method for fabricating light emitting diode chip
- Patent Title (中): 制造发光二极管芯片的方法
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Application No.: US13220693Application Date: 2011-08-30
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Publication No.: US08283188B2Publication Date: 2012-10-09
- Inventor: Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- Applicant: Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corp.
- Current Assignee: Lextar Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas|Kayden
- Priority: TW97151136A 20081226
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
Public/Granted literature
- US20110318855A1 METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP Public/Granted day:2011-12-29
Information query
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