Invention Grant
US08283261B2 Radical oxidation process for fabricating a nonvolatile charge trap memory device
有权
用于制造非易失性电荷陷阱存储器件的自由基氧化工艺
- Patent Title: Radical oxidation process for fabricating a nonvolatile charge trap memory device
- Patent Title (中): 用于制造非易失性电荷陷阱存储器件的自由基氧化工艺
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Application No.: US12124855Application Date: 2008-05-21
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Publication No.: US08283261B2Publication Date: 2012-10-09
- Inventor: Krishnaswamy Ramkumar
- Applicant: Krishnaswamy Ramkumar
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed Thereon. A portion of the charge-trapping layer is then oxidized to form a blocking dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process.
Public/Granted literature
- US20080293255A1 RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP MEMORY DEVICE Public/Granted day:2008-11-27
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