发明授权
- 专利标题： Semiconductor device having an enhanced well region
- 专利标题（中）： 具有增强的阱区的半导体器件
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申请号： US12814675申请日： 2010-06-14
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公开(公告)号： US08283722B2公开(公告)日： 2012-10-09
- 发明人: Akira Ito
- 申请人： Akira Ito
- 申请人地址： US CA Irvine
- 专利权人： Broadcom Corporation
- 当前专利权人： Broadcom Corporation
- 当前专利权人地址： US CA Irvine
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes an enhanced well region to effectively increase a voltage at which punch-through occurs when compared to a conventional semiconductor device. The enhanced well region includes a greater number of excess carriers when compared to a well region of the conventional semiconductor device. These larger number of excess carriers attract more carriers allowing more current to flow through a channel region of the semiconductor device before depleting the enhanced well region of the carriers. As a result, the semiconductor device may accommodate a greater voltage being applied to its drain region before the depletion region of the enhanced well region and a depletion region of a well region surrounding the drain region merge into a single depletion region.
公开/授权文献
- US20110303978A1 Semiconductor Device Having an Enhanced Well Region 公开/授权日：2011-12-15
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