Invention Grant
US08283738B2 Semiconductor device including sensor member and cap member and method of making the same
有权
包括传感器构件和盖构件的半导体装置及其制造方法
- Patent Title: Semiconductor device including sensor member and cap member and method of making the same
- Patent Title (中): 包括传感器构件和盖构件的半导体装置及其制造方法
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Application No.: US12654902Application Date: 2010-01-07
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Publication No.: US08283738B2Publication Date: 2012-10-09
- Inventor: Tetsuo Fujii , Masaki Inoue
- Applicant: Tetsuo Fujii , Masaki Inoue
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2009-003298 20090109
- Main IPC: H01L29/84
- IPC: H01L29/84
Abstract:
A semiconductor device includes a sensor member and a cap member. The sensor member has a surface and includes a first sensing section. The first sensing section includes first and second portions that are located on the surface side of the sensor member and electrically insulated from each other. The cap member has a surface and includes a cross wiring portion. The surface of the cap member is joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member. The cross wiring portion electrically connects the first portion to the second portion.
Public/Granted literature
- US20100176466A1 Semiconductor device and method of making the same Public/Granted day:2010-07-15
Information query
IPC分类:
