Invention Grant
- Patent Title: Thin-wafer current sensors
- Patent Title (中): 薄片电流传感器
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Application No.: US12872665Application Date: 2010-08-31
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Publication No.: US08283742B2Publication Date: 2012-10-09
- Inventor: Mario Motz , Udo Ausserlechner
- Applicant: Mario Motz , Udo Ausserlechner
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies, A.G.
- Current Assignee: Infineon Technologies, A.G.
- Current Assignee Address: DE Neubiberg
- Agency: Patterson Thuente Christensen Pedersen, P.A.
- Main IPC: H01L27/22
- IPC: H01L27/22

Abstract:
Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through -contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors.
Public/Granted literature
- US20120049304A1 THIN-WAFER CURRENT SENSORS Public/Granted day:2012-03-01
Information query
IPC分类: