Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13051652Application Date: 2011-03-18
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Publication No.: US08283791B2Publication Date: 2012-10-09
- Inventor: Takayuki Toba , Tohru Ozaki , Toshiki Hisada , Hiromitsu Mashita , Takafumi Taguchi
- Applicant: Takayuki Toba , Tohru Ozaki , Toshiki Hisada , Hiromitsu Mashita , Takafumi Taguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-151020 20100701
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
According to one embodiment, a semiconductor device includes a plurality of first interconnects, a second interconnect, a third interconnect, and a plurality of conductive members. The plurality of first interconnects are arranged periodically to extend in one direction. The second interconnect is disposed outside a group of the plurality of first interconnects to extend in the one direction. The third interconnect is provided between the group and the second interconnect. The plurality of conductive members are disposed on a side opposite to the group as viewed from the second interconnect. A shortest distance between the first interconnect and the third interconnect, a shortest distance between the third interconnect and the second interconnect, and a shortest distance between the first interconnects are equal. A shortest distance between the second interconnect and the conductive member is longer than the shortest distance between the first interconnects.
Public/Granted literature
- US20120001331A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2012-01-05
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