Invention Grant
- Patent Title: Negative charge pump with current protection
- Patent Title (中): 负电荷泵带电流保护
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Application No.: US12821883Application Date: 2010-06-23
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Publication No.: US08283970B2Publication Date: 2012-10-09
- Inventor: Hong Wu Lin
- Applicant: Hong Wu Lin
- Applicant Address: CN Shenzhen
- Assignee: STMicroelectronics (Shenzhen) R&D Co. Ltd.
- Current Assignee: STMicroelectronics (Shenzhen) R&D Co. Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Gardere Wynne Sewell LLP
- Priority: CN200910174116 20090930
- Main IPC: G05F3/02
- IPC: G05F3/02 ; G05F1/10

Abstract:
A charge pump circuit includes a first power transistor selectively actuated by a first control signal to deliver relatively higher amounts of current to a capacitor and a second non-power transistor connected in parallel with the first power transistor and selectively actuated by a second control signal to deliver relatively lower amounts of current to the capacitor. The charge pump circuit includes a pumped voltage output that is sensed to generate a sensed voltage output. A comparison circuit compares the sensed voltage output to a threshold voltage. A logic circuit receives an output of the comparison circuit and enables the first power transistor and disables the second non-power transistor in a first mode of operation if the comparison is not satisfied. The logic circuit further disables the first power transistor and enables the second non-power transistor in a second mode of operation if the comparison is satisfied. The logic circuit returns from the second mode of operation to the first mode of operation after the comparison is subsequently not satisfied.
Public/Granted literature
- US20110074481A1 NEGATIVE CHARGE PUMP WITH CURRENT PROTECTION Public/Granted day:2011-03-31
Information query
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