Invention Grant
- Patent Title: Light emitting diode and fabricating method thereof
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US12833648Application Date: 2010-07-09
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Publication No.: US08288181B2Publication Date: 2012-10-16
- Inventor: Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
- Applicant: Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Priority: TW94101801A 20050121
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
Public/Granted literature
- US20100279443A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF Public/Granted day:2010-11-04
Information query
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