Invention Grant
- Patent Title: Semiconductor device having through electrode and method of fabricating the same
- Patent Title (中): 具有通孔电极的半导体器件及其制造方法
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Application No.: US12270386Application Date: 2008-11-13
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Publication No.: US08288278B2Publication Date: 2012-10-16
- Inventor: Ki-Tae Park , Kang-Wook Lee , Hyun-Kyoung Kim
- Applicant: Ki-Tae Park , Kang-Wook Lee , Hyun-Kyoung Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0116070 20071114
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A semiconductor device includes a substrate, and a through electrode passing through the substrate. The semiconductor device has a pad region and a through electrode region. A pad covers the pad region, extends into the through electrode region, and delimits an opening in the through electrode region. A through electrode extends through the semiconductor substrate below the hole in the pad in the through region.
Public/Granted literature
- US20090124072A1 SEMICONDUCTOR DEVICE HAVING THROUGH ELECTRODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-05-14
Information query
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