- 专利标题: Precursors for CVD silicon carbo-nitride films
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申请号: US13051591申请日: 2011-03-18
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公开(公告)号: US08288577B2公开(公告)日: 2012-10-16
- 发明人: Manchao Xiao , Arthur Kenneth Hochberg
- 申请人: Manchao Xiao , Arthur Kenneth Hochberg
- 申请人地址: US PA Allentown
- 专利权人: Air Products and Chemicals, Inc.
- 当前专利权人: Air Products and Chemicals, Inc.
- 当前专利权人地址: US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian
- 主分类号: C07F7/02
- IPC分类号: C07F7/02 ; C23C18/00
摘要:
Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
公开/授权文献
- US08383849B2 Precursors for CVD silicon carbo-nitride films 公开/授权日:2013-02-26
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