发明授权
- 专利标题： Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses
- 专利标题（中）： 在高K电介质环境和结果设备中强化电荷存储材料
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申请号： US12728697申请日： 2010-03-22
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公开(公告)号： US08288811B2公开(公告)日： 2012-10-16
- 发明人: D. V. Nirmal Ramaswamy , Matthew N. Rocklein , Rhett T. Brewer
- 申请人： D. V. Nirmal Ramaswamy , Matthew N. Rocklein , Rhett T. Brewer
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/792 ; H01L21/336
摘要：
Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.
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