发明授权
- 专利标题： High voltage power integrated circuit
- 专利标题（中）： 高压电源集成电路
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申请号： US12815766申请日： 2010-06-15
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公开(公告)号： US08288820B2公开(公告)日： 2012-10-16
- 发明人: Christopher Boguslaw Kocon , John Manning Savidge Neilson , Simon John Molloy , Haian Lin , Charles Walter Pearce
- 申请人： Christopher Boguslaw Kocon , John Manning Savidge Neilson , Simon John Molloy , Haian Lin , Charles Walter Pearce
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/336 ; H01L25/00
摘要：
A high performance, power integrated circuit composed of two charge balanced, extended drain NMOS transistors (CBDEMOS) formed on an n-substrate. A CBDENMOS transistor with an n-type substrate source. A charge balanced channel diode (CBCD) with an n-type substrate. A process for forming a high performance, power integrated circuit composed of two CBDENMOS transistors formed on an n-substrate. A process for forming a power integrated circuit composed of one CBDENMOS transistor and one CBCD on an n-type substrate.
公开/授权文献
- US20100315159A1 HIGH VOLTAGE POWER INTEGRATED CIRCUIT 公开/授权日：2010-12-16
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